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Jpn. J. Appl. Phys. 43 (2004) pp. 7848-7852  |Previous Article| |Next Article|  |Table of Contents|
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Characterization of Hf0.3Al0.7Ox Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams

Akira Uedono1,2, Masakazu Goto1, Keiichi Higuchi1, Kenji Shiraishi2,3, Kikuo Yamabe1,2, Hiroshi Kitajima4, Riichiro Mitsuhashi4, Atsushi Horiuchi4, Kazuyoshi Torii4, Tsunetoshi Arikado4, Ryoichi Suzuki5, Toshiyuki Ohdaira5 and Keisaku Yamada2,6

1Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
2Nanomaterials Lab., National Institute for Materials Science, 3-13 Sakura, Tsukuba, Ibaraki 305-0003, Japan
3Institute of Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan
4Semiconductor Leading Edge Technologies, Inc. (Selete), 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
5National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
6Nano Technology Research Laboratory, Waseda University, 513 Waseda-Tsurumaki, Shinjuku, Tokyo 162-0041, Japan

(Received May 26, 2004; accepted July 21, 2004; published November 15, 2004)

Thin Hf0.3Al0.7Ox films fabricated by an atomic-layer-deposition technique were characterized using monoenergetic positron beams. From the measurements of the Doppler broadening spectra of annihilation radiation and the lifetime spectra of positrons for 3- and 7-nm-thick HfAlOx films deposited on SiON(0.9 nm)/Si, it was found that positrons in the HfAlOx films annihilate from the trapped state by open spaces that exist intrinsically in their amorphous structure. The line-shape parameter S and the positron lifetime corresponding to the HfAlOx films decreased with increasing oxygen content (0.004–1%) in the annealing atmosphere. This fact was attributed to the shrinkage of the open spaces due to the change in the matrix structure of amorphous HfAlOx. The increase in oxygen content was also found to decrease the transient current of n+-polycrystalline-Si/HfAlOx/SiON/Si. The decrease in the mean size of the open spaces and the resultant hardening of the matrix structure are considered to suppress the dielectric polarization of HfAlOx.

URL: http://jjap.jsap.jp/link?JJAP/43/7848/
DOI: 10.1143/JJAP.43.7848


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