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Inductively Coupled Plasma Reactive Ion Etching-Induced GaN Defect Studied by Schottky Current Transport Analysis
Kuo-Chin Huang,
Wen-How Lan1 and
Kai Feng Huang
Department of Electrophysics, National Chiao Tung University, Hsinchu 300, Taiwan, Republic of China
1Department of Electrical Engineering, National University of Kaohsiung, Kaohsiung 811, Taiwan, Republic of China
(Received April 28, 2003; accepted August 14, 2003; published January 13, 2004)
The defect induced by inductively coupled plasma reactive ion etching (ICP-RIE) on a GaN surface has been examined through current transport analysis. The current transport mechanism of field emission and thermionic emission were characterized. Annealing in nitrogen and hydrogen ambient was used to eliminate the defect induced by the ICP-RIE process. A comparison of the ideal factor and characteristic energy reveals that hydrogen is more effective than nitrogen in removing the defect induced by the ICP-RIE.
URL:
http://jjap.jsap.jp/link?JJAP/43/82/
DOI: 10.1143/JJAP.43.82
- S. Nakamura, T. Mokia and M. Senoh:
Appl. Phys. Lett. 64 (1994) 1687[AIP Scitation].
- S. Nakamura, M. Senoh, N. Iwasa and S. I. Nagahama:
Jpn. J. Appl. Phys. 34 (1995) L797[JSAP].
- S. Nakamura, M. Senoh, S. I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto and H. Kiyoku:
Appl. Phys. Lett. 70 (1996) 868[AIP Scitation].
- M. A. Khan, A. Bhattarai, J. N. Kuznia and D. T. Olson:
Appl. Phys. Lett. 63 (1993) 1214[AIP Scitation].
- M. A. Khan, J. N. Kuznia, D. T. Olson, M. Blasingame and A. R. Bhattarai:
Appl. Phys. Lett. 63 (1993) 2455[AIP Scitation].
- H. Cho, C. B. Vartuli, C. R. Abernathy, S. M. Donovan, S. J. Pearton, R. J. Shul and J. Han:
Solid-State Electron. 42 (1998) 2277[CrossRef].
- H. S. Kim, G.-Y. Yeom, J. W. Lee and T. I. Kim:
Thin Solid Films 341 (1999) 180[CrossRef].
- X. A. Cao, H. Cho, S. J. Pearton, G. T. Dang, A. P. Zhang, F. Ren, R. J. Shul and J. M. Van Hove:
Appl. Phys. Lett. 75 (1999) 232[AIP Scitation].
- J. M. Lee, K.-M. Chang, S. W. Kim, C. Huh, I. H. Lee and S. J. Park:
J. Appl. Phys. 87 (2000) 7667[AIP Scitation].
- M. Nakaji, T. Egawa, H. Ishikawa, S. Arulkumaran and T. Jimbo:
Jpn. J. Appl. Phys. 41 (2002) L493[JSAP].
- P. Hacke, T. Detchprohm, K. Hiramatsu and N. Sawaki:
Appl. Phys. Lett. 63 (1993) 2676[AIP Scitation].
- J. D. Guo, M. S. Feng, R. J. Guo, F. M. Pan and C. Y. Chang:
Appl. Phys. Lett. 67 (1995) 2657[AIP Scitation].
- L. Wang, M. I. Nathan, T.-H. Lim, M. A. Khan and Q. Chen:
Appl. Phys. Lett. 68 (1996) 1267[AIP Scitation].
- J. D. Guo, F. M. Pan, M. S. Feng, R. J. Guo, P. F. Chou and C. Y. Chang:
J. Appl. Phys. 80 (1996) 1623[AIP Scitation].
- J. S. Jang, S. J. Park and T. Y. Seong:
J. Vac. Sci. Technol. B 17 (1999) 2667[AIP Scitation].
- H. Hasegawa and S. Oyama:
J. Vac. Sci. Technol. B 20 (2002) 1647[AIP Scitation].
- A. Y. C. Yu:
Solid-State Electron. 13 (1970) 239[CrossRef].
- Dieter K. Schroder: Semiconductor Material and Device Characterization (John Wiley & Sons, New York, 1998) Chap. 3–4.
- L. S. Yu, Q. Z. Liu, Q. J. Xing, D. J. Qiao, S. S. Lau and J. Redwing:
J. Appl. Phys. 84 (1998) 2099[AIP Scitation].
- K. Suzue, S. N. Mohammad, Z. F. Fan, W. Kim, O. Aktas, A. E. Botchkarev and H. Morkoc:
J. Appl. Phys. 80 (1996) 4467[AIP Scitation].
- B. E. Deal, E. L. MacKenna and P. L. Castro: J. Electrochem. Soc. 116 (1969) 997.
- J. Kim, F. Ren, B. P. Gila, C. R. Abernathu and S. J. Pearton:
Appl. Phys. Lett. 82 (2003) 739[AIP Scitation].
