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Jpn. J. Appl. Phys. 43 (2004) pp. L1088-L1090  |Previous Article| |Next Article|  |Table of Contents|
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Letter

Zn_1-xCd_xO Film Growth Using Remote Plasma-Enhanced Metalorganic Chemical Vapor Deposition

Satoshi Shigemori^1,, Atsushi Nakamura², Junji Ishihara¹, Toru Aoki^1,2 and Jiro Temmyo^1,2

¹Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8011, Japan
²Graduate School of Electronic Science and Technology, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8011, Japan

(Received April 2, 2004; revised June 18, 2004; accepted June 29, 2004; published July 30, 2004)

Zn_1-xCd_xO films were successfully grown by remote plasma-enhanced metalorganic chemical vapor deposition (RPE-MOCVD). The content ratio of Zn_1-xCd_xO films was controlled by changing the molar ratio of diethyl zinc (DEZn) to dimethyl cadmium (DMCd). The wurtzite structure of Zn_1-xCd_xO films was obtained by increasing the Cd content up to x=0.697. The optical-band-gap energy of Zn_1-xCd_xO films was tuned between 1.85 eV and 3.28 eV at room temperature. The photoluminescence emission of hexagonal Zn_1-xCd_xO films up to x = 0.697 was observed at room temperature.

URL: http://jjap.jsap.jp/link?JJAP/43/L1088/
DOI: 10.1143/JJAP.43.L1088

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