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Jpn. J. Appl. Phys. 43 (2004) pp. L1099-L1102  |Previous Article| |Next Article|  |Table of Contents|
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Letter

Optically Pumped Lasing at 353 nm Using Non-polar a-plane AlGaN Multiple Quantum Wells over r-plane Sapphire

Changqing Chen, Maxim Shatalov, Edmundas Kuokstis, Vinod Adivarahan, Mikhail Gaevski, Shiva Rai and M. Asif Khan

Department of Electrical Engineering, University of South Carolina Columbia, South Carolina 29208, U.S.A.

(Received May 21, 2004; revised June 29, 2004; accepted July 1, 2004; published July 30, 2004)

We report an optically-pumped alternative nitride-based laser with room-temperature emission at 353 nm. The active region comprised of non-polar a-plane Al_0.04Ga_0.96N/Al_0.08Ga_0.92N multiple quantum wells whereas the lasing cavity consisted of Al_0.15Ga_0.85N clad and Al_0.10Ga_0.85N waveguide layers and naturally cleaved facet mirrors. The layers were grown over r-plane sapphire substrates by metalorganic chemical vapor deposition technique. A room temperature lasing threshold for N₂-laser photoexcitation of 110 kW/cm² and a modal optical gain of 215 cm^-1 was measured at the peak emission wavelength.

URL: http://jjap.jsap.jp/link?JJAP/43/L1099/
DOI: 10.1143/JJAP.43.L1099

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