Jpn. J. Appl. Phys. 43 (2004) pp. L1199-L1201 |Previous Article| |Next Article| |Table of Contents|
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Letter
High Field-Effect Hole Mobility in Organic-Inorganic Hybrid Thin Films Prepared by Vacuum Vapor Deposition Technique
Toshinori Matsushima,
Katsuhiko Fujita and
Tetsuo Tsutsui
Department of Applied Science for Electronics and Materials, Graduate School of Engineering Sciences, Kyushu University, 6-1 Kasuga, Fukuoka 816-8580, Japan
(Received June 7, 2004; accepted July 6, 2004; published August 20, 2004)
Organic-inorganic layered perovskite films, (C6H5C2H4NH3)2SnI4, were grown on 60°C substrates at a growth rate of 0.0005 nm/s by a vacuum vapor deposition technique, and field-effect transistors with a hybrid semiconductor were fabricated. From measurements of ultraviolet-visible (UV-VIS) absorption spectra and X-ray diffraction profiles, the vacuum-deposited films contained a well-developed layered perovskite structure, where inorganic sheets alternate with organic layers in the direction perpendicular to the substrate surface. In the field-effect transistors, the vacuum-deposited hybrid films acted as p-channel semiconductors and exhibited a hole mobility of 0.78 cm2/Vs in the saturation regime, a threshold voltage of -1.7 V, and a drain current on/off ratio of 4.2 ×105.
URL:
http://jjap.jsap.jp/link?JJAP/43/L1199/
DOI: 10.1143/JJAP.43.L1199
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