Jpn. J. Appl. Phys. 43 (2004) pp. L1394-L1396  |Table of Contents|
|Abstract| |Full Text PDF (155K)| |Buy This Article|

Analytical Estimation of Effective Lifetimes of Minority Carriers Injected with Laser Pulse into Dry-Oxidized p-Type Silicon Wafer

Chusuke Munakata

Articles citing this article

The list of citing articles is based on data provided by CrossRef Cited-by Linking. Any errors or omissions are the responsibility of the primary publisher.

  1. Japanese Journal of Applied Physics 52 (2013) 011801
    Investigation of Silicon Surface Passivation by Microwave Annealing Using Multiple-Wavelength Light-Induced Carrier Lifetime Measurement
    Toshiyuki Sameshima, Ryoko Ebina, Koichi Betsuin, Yuta Takiguchi, and Masahiko Hasumi
  2. Japanese Journal of Applied Physics 52 (2013) 041303
    Minority Carrier Annihilation in Lateral Direction Caused by Recombination Defects at Cut Edges and Bear Surfaces of Crystalline Silicon
    Toshiyuki Sameshima, Jun Furukawa, and Shinya Yoshidomi
  3. Japanese Journal of Applied Physics 46 (2007) 243
    Surface and Volume Decay Times of Photoconductivity in n-Type Silicon Wafers
    Chusuke Munakata and Takumi Suzuki
  4. Japanese Journal of Applied Physics 45 (2006) L941
    Separation between Surface and Volume Decay Times of Photoconductivity in p-Type Silicon Wafers
    Chusuke Munakata and Takumi Suzuki
  5. Japanese Journal of Applied Physics 44 (2005) 139
    Density Distribution Profiles of Excess Minority Carriers Injected with 904-nm-Wavelength Laser Pulse into 400-µm-Thick Silicon Wafer
    Chusuke Munakata


[ARCHIVE] [SEARCH] [REGISTRATION] [JJAP HOME] [JSAP HOME]
Copyright ©2011 The Japan Society of Applied Physics
Contact information