Jpn. J. Appl. Phys. 43 (2004) pp. L334-L336 |Previous Article| |Next Article| |Table of Contents|
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Letter
Comparative Study on the Properties of GaNAs/GaAs Triple Quantum Wells Annealed by Different Methods
Yijun Sun,
Masayuki Yamamori,
Takashi Egawa and
Hiroyasu Ishikawa
Research Center for Nano-Device and System, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
(Received December 3, 2003; accepted December 31, 2003; published February 13, 2004)
GaNAs/GaAs triple quantum wells (QWs) grown by chemical beam epitaxy are annealed by two methods, ex situ rapid thermal annealing (RTA) and in situ annealing in a growth chamber followed by ex situ RTA (NRTA). The effects of annealing method on the structural, morphological, and optical properties of the QWs are studied comparatively. The results show that although there is surface desorption for both RTA and NRTA, the holes on the sample surface after desorption are clearly different. RTA is better than NRTA from the viewpoints of both surface morphology and optical properties.
URL:
http://jjap.jsap.jp/link?JJAP/43/L334/
DOI: 10.1143/JJAP.43.L334
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