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Jpn. J. Appl. Phys. 43 (2004) pp. L340-L342  |Previous Article| |Next Article|  |Table of Contents|
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Letter

Differential Absorption in InGaN Multiple Quantum Wells and Epilayers Induced by Blue-Violet Laser Diode

Masahiro Nomura^1,, Munetaka Arita², Satoshi Ashihara¹, Masao Nishioka¹, Yasuhiko Arakawa^1,2, Tsutomu Shimura¹ and Kazuo Kuroda¹

¹Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
²Research Center for Advanced Science and Technology, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan

(Received December 16, 2003; accepted January 9, 2004; published February 13, 2004)

We report on the differential absorption spectra induced by a continuous-wave (cw) laser beam at 405 nm and by a femtosecond pulse for In_0.10Ga_0.90N multiple quantum wells and epilayers. For a thick InGaN epilayer, even low power cw pumping can cause sizable absorption changes that are observed at 2 ns after high-energy pulse excitation. However, the absorption changes are very small for a multiple quantum well structure. Photogenerated carriers are trapped in deep levels and screen piezoelectric fields. The screening effect leads to absorption spectrum changes around the absorption edge. The piezoelectric fields are screened effectively and larger absorption changes are observed in thicker epilayers.

URL: http://jjap.jsap.jp/link?JJAP/43/L340/
DOI: 10.1143/JJAP.43.L340

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