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Jpn. J. Appl. Phys. 43 (2004) pp. L346-L348  |Previous Article| |Next Article|  |Table of Contents|
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Letter

Surface Characterization of 3C-SiC Exposed to XeF₂

Morimichi Watanabe, Yukimasa Mori, Hiroaki Sakai, Takashi Iida¹, Shunsuke Koide¹, Eri Maeta¹, Kyoichi Sawabe¹ and Kosuke Shobatake^1,

Materials Research Laboratory, NGK Insulators, Ltd., 2-56 Suda-cho, Mizuho, Nagoya 467-8530, Japan
¹Department of Molecular Design and Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa, Nagoya 464-8603, Japan

(Received January 6, 2004; accepted January 16, 2004; published February 13, 2004)

Polycrystalline cubic silicon carbide (3C-SiC) surfaces exposed to XeF₂ vapor at 1.8×10^-4 Torr at sample temperatures ranging from T_s = 300 to 800 K have been characterized using X-ray photoelectron spectroscopy (XPS) and scanning Auger microscopy (SAM). Above T_s = 520 K, SiC surface reacts with XeF₂ forming volatile SiF₄ and a reaction layer that is mainly composed of partially fluorinated C species. As T_s is raised, the reaction layer becomes thicker. The exposure time dependence of the thickness of the reaction layer measured at T_s = 800 K gave a rate constant for layer formation as 1.1 µm·h^-1.

URL: http://jjap.jsap.jp/link?JJAP/43/L346/
DOI: 10.1143/JJAP.43.L346

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