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Jpn. J. Appl. Phys. 43 (2004) pp. L349-L351  |Next Article|  |Table of Contents|
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Express Letter

Observation of Exciton Transition in 1.3–1.55 µm Band from Single InAs/InP Quantum Dots in Mesa Structure

Kazuya Takemoto, Yoshiki Sakuma¹, Shinichi Hirose, Tatsuya Usuki and Naoki Yokoyama

Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan
¹National Institute for Materials Science, 1-2-1 Sengen, Tsukuba 305-0047, Japan

(Received January 9, 2004; accepted January 14, 2004; published February 13, 2004)

Single InAs/InP quantum dots from the O-band (1.3 µm) to the C-band (1.55 µm) were produced in order to realize a quantum information device for optical telecommunication. Our single quantum dot in any band has a sharp and discrete exciton line. To obtain quantum dots with intensive emissions, we applied a `double-cap' growth technique to metalorganic chemical vapor deposition. To lower fabrication damage to quantum dots, we employed photolithography and wet chemical etching for fabricating 140-nm mesa structure with a quantum dot. Combination of the growth and the fabrication techniques is essential to the good optical property.

URL: http://jjap.jsap.jp/link?JJAP/43/L349/
DOI: 10.1143/JJAP.43.L349

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