Jpn. J. Appl. Phys. 43 (2004) pp. L637-L639  |Previous Article| |Next Article|  |Table of Contents|
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Letter

Roughening Hexagonal Surface Morphology on Laser Lift-Off (LLO) N-Face GaN with Simple Photo-Enhanced Chemical Wet Etching

Yan Gao1,, Tetsuo Fujii2, Rajat Sharma1, Kenji Fujito2, Steven P. Denbaars1,2, Shuji Nakamura1,2 and Evelyn L. Hu1

1Materials Department, University of California, Santa Barbara CA, 93106-5050, U. S. A.
2NICP/ERATO JST, UCSB Group, University of California, Santa Barbara, CA 93106-5050, U. S. A.

(Received March 1, 2004; accepted March 17, 2004; published April 16, 2004)

A photo-enhanced chemical wet etching technique is presented to form a roughened surface morphology with hexagonal symmetry on laser lift-off (LLO) N-face GaN grown by metalorganic chemical vapor deposition (MOCVD). An aqueous solution of KOH was used as etch electrolyte. The etched surface showed cones with hexagonal pyramid structures bound by {1011} facets. A detailed analysis of the etch rates and time-evolution of the surface morphology is described as a function of KOH concentration (1.25 M to 8.8 M). The comparison between (0001) N-face and Ga-face GaN etch morphology is discussed. This roughened hexagonal surface morphology can be applied to enhance the external efficiency in GaN based light-emitting diodes (LEDs).

URL: http://jjap.jsap.jp/link?JJAP/43/L637/
DOI: 10.1143/JJAP.43.L637
KEYWORDS:N-face GaN, roughening, hexagonal pyramid, photo-enhanced, chemical wet etching


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