Jpn. J. Appl. Phys. 43 (2004) pp. L637-L639  |Previous Article| |Next Article|  |Table of Contents|
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Roughening Hexagonal Surface Morphology on Laser Lift-Off (LLO) N-Face GaN with Simple Photo-Enhanced Chemical Wet Etching

Yan Gao1,, Tetsuo Fujii2, Rajat Sharma1, Kenji Fujito2, Steven P. Denbaars1,2, Shuji Nakamura1,2 and Evelyn L. Hu1

1Materials Department, University of California, Santa Barbara CA, 93106-5050, U. S. A.
2NICP/ERATO JST, UCSB Group, University of California, Santa Barbara, CA 93106-5050, U. S. A.

(Received March 1, 2004; accepted March 17, 2004; published April 16, 2004)

A photo-enhanced chemical wet etching technique is presented to form a roughened surface morphology with hexagonal symmetry on laser lift-off (LLO) N-face GaN grown by metalorganic chemical vapor deposition (MOCVD). An aqueous solution of KOH was used as etch electrolyte. The etched surface showed cones with hexagonal pyramid structures bound by {1011} facets. A detailed analysis of the etch rates and time-evolution of the surface morphology is described as a function of KOH concentration (1.25 M to 8.8 M). The comparison between (0001) N-face and Ga-face GaN etch morphology is discussed. This roughened hexagonal surface morphology can be applied to enhance the external efficiency in GaN based light-emitting diodes (LEDs).

DOI: 10.1143/JJAP.43.L637
KEYWORDS:N-face GaN, roughening, hexagonal pyramid, photo-enhanced, chemical wet etching

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References | Citing Articles (47)

  1. S. Nakamura: The Blue Laser Diode (Springer, Berlin, 1997).
  2. J. J. Wierer, D. A. Steigerwald, M. R. Krames, J. J. O'shea, M. J. Ludowise, G. Christenson, Y.-C. Shen, C. Lowery, P. S. Martin, S. Subramanya, W. Gotz, N. F. Gardner, R. S. Kern and S. A. Stockman: Appl. Phys. Lett., 78 (2001) 3379[AIP Scitation].
  3. C. Huh, K.-S. Lee, E.-J. Kang and S.-J. Park: J. Appl. Phys. 93 (2003) 9383[AIP Scitation].
  4. M. S. Minsky, M. White and E. L. Hu: Appl. Phys. Lett. 68 (1996) 1531[AIP Scitation].
  5. T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars and S. Nakamura: Appl. Phys. Lett. 84 (2004) 855[AIP Scitation].
  6. Y. Gao, I. Ben-Yaacov, U. Mishra and E. Hu: to be published in Int. J. High Speed Electron. & Syst., Book Ser. Selected Topics in Electronics & Systems, 2004.
  7. X. H. Wu, C. R. Elsass, A. Abare, M. Mack, S. Keller, P. M. Petroff, S. P. DenBaars, J. S. Speck and S. J. Rosner: Appl. Phys. Lett. 72 (1998) 692[AIP Scitation].
  8. H. M. Ng, N. G. Weimann and A. Chowdhury: J. Appl. Phys. 94 (2003) 650[AIP Scitation].
  9. T. Palacios, F. Calle, M. Varela, C. Ballesteros, E. Monroy, F. B. Naranjo, M. A. Sanchez-Garcia, E. Calleja and E. Munoz: Semicond. Sci. Technol. 15 (2000) 996[IoP STACKS].
  10. Y. Gao, M. Craven, J. Speck, S. P. DenBaars and E. L. Hu: to be published in Appl. Phys. Lett.
  11. P. R. Tavernier, T. Margalith, L. A. Coldren, S. P. DenBaars and D. R. Clarke: Electrochem. Solid State Lett. 5 (2002) G61.
  12. C. Youtsey, L. T. Romano and I. Adesida: Appl. Phys. Lett. 73 (1998) 797[AIP Scitation].

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