Jpn. J. Appl. Phys. 43 (2004) pp. L888-L890 |Previous Article| |Next Article| |Table of Contents|
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Letter
Growth of Diamond from Si-Containing Amorphous Carbon Film Using Synchrotron Radiation
Yuki Kimura,
Osamu Kido,
Masayuki Oomoto,
Koji Ogawa,
Hidetoshi Namba and
Chihiro Kaito
Department of Physics, Ritsumeikan University, Kusatsu-shi, Shiga 525-8577, Japan
(Received February 3, 2004; revised April 20, 2004; accepted May 10, 2004; published June 18, 2004)
Si-doped amorphous carbon film prepared by the simultaneous vacuum evaporation of carbon and silicon has been irradiated by a synchrotron radiation (SR) beam. The preferential growth of diamond crystals was found by transmission electron microscope observation conducted after SR irradiation. It was also found that the solid-solution phase of carbon and silicon with the diamond structure was produced in the as-deposited film and at the initial stage of the crystallization. The solid-solution crystal remained in the stable phase up to 6 nm in size. The catalytic effect of Si was prominent in the growth of diamond.
URL:
http://jjap.jsap.jp/link?JJAP/43/L888/
DOI: 10.1143/JJAP.43.L888
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