Jpn. J. Appl. Phys. 44 (2005) pp. 1361-1364 |Previous Article| |Next Article| |Table of Contents|
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Low-Temperature Heteroepitaxial Growth of SiC on (100) Si Using Hot-Mesh Chemical Vapor Deposition
Department of Electrical, Electronic and Information Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka 940-2188, Japan
(Received September 30, 2004; revised November 29, 2004; accepted December 2, 2004; published March 8, 2005)
The crystal growth of 3C-SiC films on (100) Si substrates by the hot-mesh chemical vapor deposition (HMCVD) method using monomethylsilane (MMS) as a source gas was investigated. A mesh structure of hot tungsten (W) wire was used as a catalyzer. At substrate temperatures above 750°C and at a mesh temperature of 1600°C, 3C-SiC crystal was epitaxially grown on Si substrates. From the X-ray rocking curve spectra of the (311) peak, SiC was also epitaxially grown in the substrate plane. From the dependence of growth rate on substrate temperature and W-mesh temperature, the growth mechanism of SiC films by HMCVD was considered.
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