Jpn. J. Appl. Phys. 44 (2005) pp. 1673-1681  |Previous Article| |Next Article|  |Table of Contents|
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Suppression of Thermally Induced Leakage of NiSi-Silicided Shallow Junctions by Pre-Silicide Fluorine Implantation

Masakatsu Tsuchiaki, Kazuya Ohuchi¹ and Akira Nishiyama

(Received December 8, 2004; accepted January 14, 2005; published April 8, 2005)

Thermally unstable NiSi films on shallow junctions induce a large leakage current upon heat treatment. To improve their thermal stability, using damage-free junctions formed by solid-phase diffusion, a sensitive and comparative investigation is conducted on the efficacy of pre-silicide ion implantation (PSII) of fluorine and nitrogen. After annealing NiSi silicided junctions, the basic and systematic monitoring of thermally induced leakage revealed that leakage suppression strongly depends on the element being implanted, i.e., F-PSII is found to be markedly superior to N-PSII. Even at a low F dosage, F-PSII attains a uniform and efficient leakage suppression of up to 6 orders of magnitude. Furthermore, unlike N-PSII, the suppression is achieved without any major disturbances to the critical characteristics of complementary metal-oxide-semiconductor transistors (CMOS) for ULSI application. The distinctive F presence around the NiSi/Si interface confers a substantial thermal stability to the NiSi film. The resulting effective blockage of Ni infiltration into a Si substrate, as well as the complete immobilization of Ni migration inside the Si substrate, leads to a drastic leakage suppression by F-PSII.

URL: http://jjap.jsap.jp/link?JJAP/44/1673/
DOI: 10.1143/JJAP.44.1673

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