Jpn. J. Appl. Phys. 44 (2005) pp. 2311-2315  |Previous Article| |Next Article|  |Table of Contents|
|Full Text PDF (216K)| |Buy This Article|

Cubic-HfN Formation in Hf-Based High-k Gate Dielectrics with N Incorporation and Its Impact on Electrical Properties of Films

Masato Koyama, Yuuichi Kamimuta, Masahiro Koike, Tsunehiro Ino and Akira Nishiyama

(Received September 24, 2004; accepted December 15, 2004; published April 21, 2005)

We examined the effect of the annealing conditions on cubic-HfN (c-HfN) segregation in N-incorporated hafnium aluminate (HfAlON). Low-temperature activation (850°C, 30 min) leads to the inhibition of c-HfN segregation in HfAlON, which occurs at 1000°C for 30 s. This results in a reduced leakage current of the film in the 850°C annealing. k values of HfAlON (k ∼22) higher than those of hafnium aluminate are confirmed, through the polarization enhancement by Hf-N bonds without a long-range order of c-HfN. We also checked c-HfN segregation in N-incorporated HfO₂ (HfON) and N-incorporated hafnium silicate (HfSiON), by changing the annealing conditions. HfON causes the segregation of Hf₂NO₂ and c-HfN at the 1065°C spike, whereas HfSiON maintains a homogeneous structure. We also found that, in the case of an excessive annealing of 1050°C for 30 min, HfSiON decomposes to HfO₂/c-HfN. We think that the phase separation is thermodynamically favorable in N-incorporated Hf-based dielectrics at this temperature, however, HfSiON is fully sustainable under practical activation conditions for conventional complementary metal-oxide-semiconductor logic devices.

URL: http://jjap.jsap.jp/link?JJAP/44/2311/
DOI: 10.1143/JJAP.44.2311

References | Citing Articles (8)

1. M. R. Visokay, J. J. Chambers, A. L. P. Rotondaro, A. Shanware and L. Colombo: Appl. Phys. Lett. 80 (2002) 3183[AIP Scitation].
2. M. Koyama, A. Kaneko, T. Ino, M. Koike, Y. Kamata, R. Iijima, Y. Kamimuta, A. Takashima, M. Suzuki, C. Hongo, S. Inumiya, M. Takayanagi and A. Nishiyama: Tech. Dig. Int. Electron Devices Meet. (2002) p. 849.
3. M. Koyama, Y. Kamimuta, M. Koike, M. Suzuki and A. Nishiyama: Jpn. J. Appl. Phys. 43 (2004) 1788[JSAP].
4. C. H. Choi, S. J. Rhee, T. S. Jeon, N. Lu, J. H. Sim, R. Clark, M. Niwa and D. L. Kwong: Tech. Dig. Int. Electron Devices Meet. (2002) p. 857.
5. C. S. Kang, H.-J. Cho, K. Onishi, R. Choi, Y. H. Kim, R. Nieh, J. Han, S. Krishnan, A. Shahriar and J. C. Lee: Tech. Dig. Int. Electron Devices Meet. (2002) p. 865.
6. K. Iwamoto, T. Nishimura, K. Tominaga, T. Yasuda, K. Kimoto, T. Nabatame and A. Toriumi: Mat. Res. Soc. Symp. Proc. 786 (2004) 1.6.1.
7. A. Toriumi, T. Nabatame and T. Horikawa: Mat. Res. Soc. Symp. Proc. 786 (2004) 2.5.1.
8. M. A. Quevedo-Lopez, M. E. I-Bouanani, M. J. Kim, B. E. Gnade, R. M. Wallace, M. R. Visokay, A. LiFatou, J. J. Chambers and L. Colombo: Appl. Phys. Lett. 82 (2003) 4669[AIP Scitation].
9. M. Koike, T. Ino, Y. Kamimuta, M. Koyama, Y. Kamata, M. Suzuki, Y. Mitani, A. Nishiyama and Y. Tsunashima: Tech. Dig. Int. Electron Devices Meet. (2003) p. 107.
10. G. Shang, P. W. Peacock and J. Robertson: Appl. Phys. Lett. 84 (2004) 106[AIP Scitation].
11. W. J. Zhu, T. Tamagawa, M. Gibson, T. Furukawa and T. P. Ma: IEEE Electron Device Lett. 23 (2002) 649[CrossRef].
12. T. Yamaguchi, R. Iijima, T. Ino, A. Nishiyama, H. Satake and N. Fukushima: Tech. Dig. Int. Electron Devices Meet. (2002) p. 621.
13. G. D. Wilk et al.: Symp. VLSI Tech. Dig. (2002) p. 88.
14. T. Kawahara, K. Torii, S. Fukuda, T. Maeda, A. Horiuchi, H. Ito, A. Muto, Y. Kato and H. Kitajima: Mat. Res. Soc. Symp. 745 (2003) N5.6.1.
15. A. J. Perry and L. Schlapbach: Solid State Commun. 56 (1985) 837[CrossRef].
16. S. J. Clarke, C. W. Michie and M. J. Rosseinsky: J. Solid State Chem. 146 (1999) 399[CrossRef].