Jpn. J. Appl. Phys. 44 (2005) pp. 2509-2511  |Previous Article| |Next Article|  |Table of Contents|
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Fabrication of Large-Area GaN-Based Light-Emitting Diodes on Cu Substrate

Jung-Tang Chu, Hung-Wen Huang, Chih-Chiang Kao, Wen-Deng Liang, Fang-I Lai, Chen-Fu Chu, Hao-Chung Kuo and Shing-Chung Wang

Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 300, Taiwan

(Received September 17, 2004; accepted December 22, 2004; published April 21, 2005)

A large-area GaN-based light-emitting diode (LED) 1000×1000 µm2 in size with a p-side down configuration was fabricated using wafer bonding and laser lift-off (LLO) techniques. The thin GaN LED was transferred onto a copper substrate without peeling or cracks. The large-area LEDs showed a uniform light-emission pattern over entire defined mesa area without a transparent contact layer on the p-type GaN. The operating current of the large-area LEDs can be driven up to 1000 mA with continuously increasing light output-power. The light output-power is 240 mW with a driving current of 1000 mA. Large-area emission and high current operation make the LLO-LEDs applicable to high-power LED applications.

URL: http://jjap.jsap.jp/link?JJAP/44/2509/
DOI: 10.1143/JJAP.44.2509
KEYWORDS:GaN LEDs, laser lift-off (LLO), wafer bonding, large-area light-emission LEDs


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