Jpn. J. Appl. Phys. 44 (2005) pp. 4213-4215 |Previous Article| |Next Article| |Table of Contents|
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Brief Communication
Fabrication Technique for Preparing Nanogap Electrodes by Conventional Silicon Processes
Shingi Hashioka1,2,
Hiroyuki Tsuritani2,
Tsutomu Obata2,
Masahiro Kadosaki2,
Satoshi Fujiki2 and
Katsumi Tanino2
1Toyama New Industry Organization, 527 Takada, Toyama 930-0866, Japan
2Toyama Industrial Technology Center, 150 Futagami, Takaoka, Toyama 933-0981, Japan
(Received November 17, 2004; accepted February 16, 2005; published June 10, 2005)
A fabrication technique for preparing nanogap electrodes, such as a gold (Au) nano electrode, using conventional silicon (Si) processes–photolithography, etching, thermal oxidation and deposition–is proposed. Stencil substrates are prepared using the Si processes. Then, without requiring complicated technology, nanogap structures can be formed using the technique. Numerous kinds of materials can be selected as an electrode. The mass production of a sensing device for the detection of deoxyribonucleic acid (DNA), or a so-called DNA chip, can be realized at a low cost.
URL:
http://jjap.jsap.jp/link?JJAP/44/4213/
DOI: 10.1143/JJAP.44.4213
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