Jpn. J. Appl. Phys. 44 (2005) pp. 4825-4830  |Previous Article| |Next Article|  |Table of Contents|
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Novel 2-Bit/Cell Metal–Oxide–Nitride–Oxide–Semiconductor Memory Device with Wrapped-Control-Gate Structure That Achieves Source-Side Hot-Electron Injection

Hideto Tomiye, Toshio Terano, Kazumasa Nomoto and Toshio Kobayashi

(Received February 16, 2005; accepted April 15, 2005; published July 8, 2005)

We have proposed a novel 2-bit/cell metal–oxide–nitride–oxide–semiconductor memory device with a wrapped gate. Programming and erasing operations are performed by source-side hot-electron injection and hot-hole injection, respectively. Programming speeds of less than 1 µs, programming currents of less than 0.2 µA/µm, and erasing speeds of 10 µs were achieved. In this paper, we describe the abilities of this device and the mechanism of the operation by using a device simulator.

URL: http://jjap.jsap.jp/link?JJAP/44/4825/
DOI: 10.1143/JJAP.44.4825
KEYWORDS:NVM, MONOS, source-side injection, hot-hole injection

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