Jpn. J. Appl. Phys. 44 (2005) pp. 4838-4842 |Previous Article| |Next Article| |Table of Contents|
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pH and Procaine Sensing Characteristics of Extended-Gate Field-Effect Transistor Based on Indium Tin Oxide Glass
Graduate School of Electronic Engineering, National Yunlin University of Science and Technology, Douliu, Yunlin, Taiwan 640, R.O.C.
1Department of Electronic Engineering, Chung Chou Institute of Technology, Yuanlin, Changhua, Taiwan 510, R.O.C.
(Received December 27, 2004; revised March 7, 2005; accepted March 14, 2005; published July 8, 2005)
The pH sensing properties of an extended-gate field-effect transistor (EGFET) based on indium tin oxide (ITO) glass are investigated in this study. The separating structures in the EGFET are examined using a current–voltage measurement system to measure I–V curves. A readout circuit is applied to measure the pH sensing EGFET output voltage, and nonideal factors (drift and hysteresis effects) are monitored in different buffer solutions (pH=1–11). It was found that separating structures for ITO glass sensors have a high pH sensitivity (∼55 mV/pH), a low drift rate and a small hysteresis width in the concentration range between pH=1 and 11 in buffer solutions. The EGFET was used in fabricating a drug-sensitive field-effect transistor (DrugFET) sensor for procaine hydrochloride. The DrugFET was prepared using a combination of the EGFET and a drug-sensitive membrane that measured the procaine concentration in the 1×10-2–1×10-6 mol/L range. The separating structure was used with a procaine DrugFET with a good response (∼200 s) at room temperature.
KEYWORDS:extended-gate field-effect transistor, ITO glass, drift, hysteresis, DrugFET, procaine
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