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Jpn. J. Appl. Phys. 44 (2005) pp. 5474-5478  |Previous Article| |Next Article|  |Table of Contents|
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Actinic Mask Inspection Using an EUV Microscope –Preparation of a Mirau Interferometer for Phase-Defect Detection–

Kazuhiro Hamamoto1,4,, Yuzuru Tanaka1,4, Hirotake Kawashima1,4, Seung Yoon Lee1,4, Nobuyuki Hosokawa2,4, Noriyuki Sakaya3,4, Morio Hosoya3,4, Tsutomu Shoki3,4, Takeo Watanabe1,4 and Hiroo Kinoshita1,4

1Laboratory of Advanced Science and Technology for Industry, University of Hyogo, 3-1-2 Kouto, Kamigori-cho, Ako-gun, Hyogo 678-1205, Japan
2Nitto Thin Film Laboratories Co., Ltd, 147-1 Myodenji, Rokugohigashine, Rokugo-machi, Senboku-gun, Akita 019-1403, Japan
3HOYA Corporation Electronics Development Center, 3-3-1 Musashino, Akishima-shi, Tokyo 196-8510, Japan
4CREST, JST

(Received October 29, 2004; accepted May 12, 2005; published July 26, 2005)

This paper describes a mask defect inspection system using 13.5 nm light for extreme ultraviolet lithography (EUVL). The Schwarzschild optics which is employed as a microscope optics has a numerical aperture (NA) of 0.3 and a magnification of 30. Furthermore, it has a potential of detecting defects as small as 22 nm on a mask. In order to inspect defects with the phase change induced by swelling of the multilayer, a Mirau interferometer is employed. It is developed that the performance of the optical system, the focal position detection mechanism for image detection while scanning, and the driving mechanism of the reference mirror for the Mirau interference. Since the accuracy of the driving mechanism of the reference was found to be 0.1 nm, enough performance of the ring-shaped piezo actuator for interference measurement was confirmed. Moreover, examples of the mask inspection by this system are shown.

URL: http://jjap.jsap.jp/link?JJAP/44/5474/
DOI: 10.1143/JJAP.44.5474


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