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Jpn. J. Appl. Phys. 44 (2005) pp. 5484-5488  |Previous Article| |Next Article|  |Table of Contents|
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Depth Profile and Line-Edge Roughness of Low-Molecular-Weight Amorphous Electron Beam Resists

Taku Hirayama, Daiju Shiono, Shogo Matsumaru, Toshiyuki Ogata, Hideo Hada, Junichi Onodera, Tadashi Arai1, Toshio Sakamizu1, Atsuko Yamaguchi1, Hiroshi Shiraishi1, Hiroshi Fukuda1 and Mitsuru Ueda2

New Technology Development Section, Tokyo Ohka Kogyo Co., Ltd., 1590 Tabata, Samukawa-machi, Koza-gun, Kanagawa 253-0114, Japan
1ULSI Research Department, Center Research Laboratory, Hitachi, Ltd., 1-280 Higashi-koigakubo, Kokubunji, Tokyo 185-8601, Japan
2Department of Organic and Polymeric Materials, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan

(Received November 5, 2004; accepted April 25, 2005; published July 26, 2005)

We have investigated the possibility of using amorphous low-molecular-weight polyphenols as chemically amplified positive-tone electron-beam (EB) resists. Low-molecular-weight polyphenol, 4,4'-methylenebis[2-[di(2-methyl-4-hydroxy-5-cyclohexylphenyl)]methyl] phenol (3M6C-MBSA) as a base matrix, was protected by 1-ethoxyethyl (EE) groups to control the dissolution rate in aqueous 0.26 N tetramethylammonium hydroxide developer. The film distribution in the depth direction for resist components determined with time-of-flight secondary ion mass spectometry (TOF-SIMS) and the Fourier amplitude spectra of line-edge roughness (LER) have been investigated to understand the relationship between them for the resists formulated with 3M6C-MBSA and two photo-acid generators (PAG), triphenylsulfonium perfluoro-1-butanesulfonate (TPS-PFBS) and triphenylsulfonium n-octanesulfonate (TPS-nOS). From these results, it was found that the resist film consisting of TPS-nOS showed more homogeneity in the depth direction of the film than did TPS-PFBS, which showed low surface energy and diffused easily to the resist surface through the matrix during a coating and post-applied bake step. The resist with TPS-nOS indicated a lower LER value of 5.1 nm in the wide frequency range, especially in the lower frequency region below 10 µm-1. Therefore, the homogeneity of the film is one of important factors for LER control.

URL: http://jjap.jsap.jp/link?JJAP/44/5484/
DOI: 10.1143/JJAP.44.5484
KEYWORDS:chemically amplified positive-tone resist, amorphous polyphenol, low molecular weight, line-edge roughness, homogeneous, depth profile


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