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Jpn. J. Appl. Phys. 44 (2005) pp. 7424-7426  |Previous Article| |Next Article|  |Table of Contents|
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Brief Communication

Thermal Annealing Effect of Indium Tin Oxide Contact to GaN Light-Emitting Diodes

Chin-Yuan Hsu, Wen-How Lan¹ and YewChung Sermon Wu

Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.
¹Department of Electrical Engineering, National University of Kaohsiung, Kaohsiung 811, Taiwan, R.O.C.

(Received March 28, 2005; accepted May 11, 2005; published October 11, 2005)

We have fabricated GaN-based light-emitting diodes (LEDs) using transparent indium tin oxide (ITO) for p-type contacts. The current–voltage (I–V) characteristics of the devices have been studied. When annealed at 700°C, the p–n junction of the diodes became very leaky, and even electrical short circuits have been observed. According to scanning electron microscopy (SEM) and energy-dispersive X-ray spectrometer analyses (EDS), it was found that indium (In) diffused into the LED structure with defects such as threading dislocations (TDs) or V-pits. The defects provide leakage paths to cause short circuits in p–n junctions at high annealing temperatures.

URL: http://jjap.jsap.jp/link?JJAP/44/7424/
DOI: 10.1143/JJAP.44.7424
KEYWORDS:GaN, LEDs, ITO contact, leakage, dislocation

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