Jpn. J. Appl. Phys. 44 (2005) pp. L1100-L1102 |Next Article| |Table of Contents|
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Express Letter
Huge Spin-Polarization of L21-Ordered Co2MnSi Epitaxial Heusler Alloy Film
Yuya Sakuraba,
Jun Nakata,
Mikihiko Oogane,
Hitoshi Kubota1,
Yasuo Ando,
Akimasa Sakuma and
Terunobu Miyazaki
Department of Applied Physics, Graduate School of engineering, Tohoku University, Aoba-yama 05, Aramaki, Aoba-ku, Sendai 980-8579, Japan
1Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba 305-8568, Japan
(Received July 19, 2005; accepted July 31, 2005; published August 19, 2005)
Magnetic tunnel junctions (MTJs) with a stacking structure of epitaxial Co2MnSi/Al–O barrier/poly-crystalline Co75Fe25 were fabricated using an ultrahigh vacuum sputtering system. The epitaxial Co2MnSi bottom electrode exhibited highly ordered L21 structure and very smooth surface morphology. Observed magnetoresistance (MR) ratios of 70% at room temperature (RT) and 159% at 2 K are the highest values to date for MTJs using a Heusler alloy electrode. A high spin-polarization of 0.89 at 2 K for Co2MnSi obtained from Julliere's model coincided with the half-metallic band structure that was predicted by theoretical calculations.
URL:
http://jjap.jsap.jp/link?JJAP/44/L1100/
DOI: 10.1143/JJAP.44.L1100
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