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Jpn. J. Appl. Phys. 44 (2005) pp. L129-L132  |Next Article|  |Table of Contents|
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Express Letter

High-Critical-Current-Density Epitaxial Films of SmBa2Cu3O7-x in High Fields

Yutaka Yoshida1,6, Kaname Matsumoto2,6, Yusuke Ichino1,6, Masakazu Itoh1,6, Ataru Ichinose3,6, Shigeru Horii4,6, Masashi Mukaida5,6 and Yoshiaki Takai1

1Department of Energy and Science, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
2Department of Materials Science and Engineering, Kyoto University, Yoshida-honmachi, Sakyo-ku, Kyoto 606-8501, Japan
3Electrical Physics Department, Komae Research Laboratory, Central Research Institute of Electric Power Industry, 2-11-1 Iwato-kita, Komae, Tokyo 201-8511, Japan
4Department of Superconductivity, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8586, Japan
5Department of Electrical and Information Engineering, Yamagata University, 4-3-16 Jyonan-cho, Yonezawa, Yamagata 992-8510, Japan
6CREST, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan

(Received November 8, 2004; accepted December 3, 2004; published January 7, 2005)

The critical current density (Jc) and irreversibility field (Birr) of epitaxial SmBa2Cu3O7-x (SmBCO) films are reported. The Birr and Jc of these films deposited on MgO(100) substrates by pulsed-laser deposition depend critically on the substrate temperature. The use of a thin SmBCO seed layer grown at a high substrate temperature enabled us to obtain fully c-axis-oriented SmBCO films at relatively low temperatures, resulting in a high Jc of 1.7 ×105 A/cm2 of B ∥c at 5 T and 77 K. This value is as high as that of the optimized NbTi superconducting wires achieved at 5 T and 4.2 K.

URL: http://jjap.jsap.jp/link?JJAP/44/L129/
DOI: 10.1143/JJAP.44.L129


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