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Jpn. J. Appl. Phys. 44 (2005) pp. L1393-L1396  |Next Article|  |Table of Contents|
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Express Letter

Hall Effect of Quasi-Hole Gas in Organic Single-Crystal Transistors

Jun Takeya^1,2,3, Kazuhito Tsukagoshi^2,4, Yoshinobu Aoyagi^2,5, Taishi Takenobu^3,6 and Yoshihiro Iwasa^3,6

¹Materials Science Research Laboratory, CRIEPI, Tokyo 201-8511, Japan
²RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
³Institute for Material Reasearch, Tohoku University, Sendai 980-8577, Japan
⁴PRESTO, Japan Science and Technology Corporation, Kawaguchi, Saitama 333-0012, Japan
⁵Tokyo Institute of Technology, Yokohama 336-8502, Japan
⁶CREST, Japan Science and Technology Corporation, Kawaguchi, Saitama 333-0012, Japan

(Received October 17, 2005; accepted October 19, 2005; published November 4, 2005)

Hall effect is detected in organic field-effect transistors, using appropriately shaped rubrene (C₄₂H₂₈) single crystals. It turned out that inverse Hall coefficient, having a positive sign, is close to the amount of electric-field induced charge upon the hole accumulation. The presence of the normal Hall effect means that the electromagnetic character of the surface charge is not of hopping carriers but resembles that of a two-dimensional hole-gas system.

URL: http://jjap.jsap.jp/link?JJAP/44/L1393/
DOI: 10.1143/JJAP.44.L1393

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