Jpn. J. Appl. Phys. 44 (2005) pp. L24-L26 |Previous Article| |Next Article| |Table of Contents|
|Full Text PDF (234K)| |Buy This Article|
Letter
Freestanding GaN Substrate by Advanced Facet-Controlled Epitaxial Lateral Overgrowth Technique with Masking Side Facets
Shinya Bohyama,
Hideto Miyake,
Kazumasa Hiramatsu,
Yoshihiko Tsuchida1 and
Takayoshi Maeda1
Department of Electrical and Electronic Engineering, Mie University, 1515 Kamihama, Tsu 514-8507, Japan
1Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd., 6 Kitahara, Tsukuba 300-3294, Japan
(Received September 9, 2004; accepted October 25, 2004; published December 10, 2004)
We propose here an advanced facet-controlled epitaxial lateral overgrowth (FACELO) technique for obtaining a GaN layer with a low threading dislocation (TD) density. In the selective-area-growth (SAG) GaN with (11–22) facets, TDs from the underlying GaN are bent horizontally, i.e., toward the <11–20> or <1–100> direction. In the advanced FACELO technique, TDs are terminated by SiO2 masks on (11–22) facets. Except for coalescence regions, the TD density of the surface was less than 106 cm-2 for the GaN layer grown by MOVPE using the advanced FACELO technique. The side masks have an additional benefit of contributing to the void formation which facilitates the separation of the thick GaN films from the sapphire substrate.
URL:
http://jjap.jsap.jp/link?JJAP/44/L24/
DOI: 10.1143/JJAP.44.L24
- A. Usui, H. Sunakawa, A. Sakai and A. Yamaguchi:
Jpn. J. Appl. Phys. 36 (1997) L899[JSAP].
- S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano and K. Chocho:
Jpn. J. Appl. Phys. 36 (1997) L1568[JSAP].
- M. Ikeda and S. Uchida:
Phys. Status Solidi A 194 (2002) 407[CrossRef].
- K. Hiramatsu, K. Nishiyama, M. Onishi, H. Mizutani, M. Narukawa, A. Motogaito, H. Miyake, Y. Iyechika and T. Maeda:
J. Cryst. Growth 221 (2000) 316[CrossRef].
- H. Miyake, M. Narukawa, H Naoi, K. Hiramatsu, Y. Iyechika and T. Maeda:
Phys. Status Solidi A 188 (2001) 725[CrossRef].
- M. K. Kelly, O. Ambacher, R. Dimitrov, R. Handschuh and M. Stutzmann:
Phys. Status Solidi A 159 (1997) R3[CrossRef].
- Y. Oshima, T. Eri, M. Shibata, H. Sunakawa and A. Usui:
Phys. Status Solidi A 194 (2002) 554[CrossRef].
- A. Sakai, H. Sunakawa and A. Usui:
Appl. Phys. Lett. 73 (1998) 481[AIP Scitation].
- Y. Honda, Y. Iyechika, T. Maeda, H. Miyake, K. Hiramatsu, H. Sone and N. Sawaki:
Jpn. J. Appl. Phys. 38 (1999) L1299[JSAP].
