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Jpn. J. Appl. Phys. 44 (2005) pp. L242-L245  |Previous Article| |Next Article|  |Table of Contents|
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Letter

Characteristics of Organic Light Emitting Diodes with Al-Doped ZnO Anode Deposited by Atomic Layer Deposition

Sang-Hee Ko Park, Jeong-Ik Lee, Chi-Sun Hwang and Hye Yong Chu

Basic Research Laboratory, Electronics and Telecommunications Research Institute, 161 Gajeong-dong, Yuseong-gu, Daejeon 305-350, Korea

(Received October 7, 2004; revised December 7, 2004; accepted December 15, 2004; published January 28, 2005)

Transparent conductive, Al-doped ZnO films (ZnO:Al) have been deposited by means of an atomic layer deposition method with the surface chemical compositions of ZnO (film A) and Al₂O₃ (film B). The sheet resistance, surface work function, and structure characteristics of ZnO:Al films have been investigated. Organic light emitting diodes (OLEDs) were fabricated on glass substrates using two different ZnO:Al anodes. The devices fabricated with them exhibited higher current and luminance with higher external quantum efficiencies below approximately 5000 cd/m², than those fabricated with a conventional tin-doped indium oxide (ITO) anode. The external quantum efficiencies of the devices with film A, film B, and ITO were 1.86, 1.97, and 1.74%, respectively.

URL: http://jjap.jsap.jp/link?JJAP/44/L242/
DOI: 10.1143/JJAP.44.L242

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