Jpn. J. Appl. Phys. 44 (2005) pp. L428-L431  |Previous Article| |Next Article|  |Table of Contents|
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Express Letter

Nanoholes in InP and C60 Layers on GaAs Substrates by Using AlGaAs Nanowire Templates

Kouta Tateno, Hideki Gotoh and Yoshio Watanabe1

NTT Basic Research Laboratories, NTT Corporation, Atsugi-shi, Kanagawa 243-0198, Japan
1NTT Advanced Technology Corporation, Atsugi-shi, Kanagawa 243-0198, Japan

(Received February 22, 2005; accepted March 7, 2005; published March 18, 2005)

As one of the nano-scale fabrication techniques, free-standing nanowires are promising. We have developed a new method for nanohole fabrication using nanowire templates; that is, etching the exposed wires selectively after the layer growth. We have demonstrated nanoholed array in InP and C60 layers on GaAs substrates. For the metalorganic vapor phase epitaxy of InP, (111)B facets tend to form so that the AlGaAs nanowires are easily removed. Tilted nanowires and nanoholes are possible by using (311)B substrates. As another holed layer case, a C60 layer was tried. We found that this method can also be applied to the fragile material like C60.

DOI: 10.1143/JJAP.44.L428
KEYWORDS:nanowire, nanohole, AlGaAs, InP, C60, scanning electron microscope

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