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Jpn. J. Appl. Phys. 44 (2005) pp. L643-L645  |Next Article|  |Table of Contents|
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Blue Light-Emitting Diode Based on ZnO

Atsushi Tsukazaki¹, Masashi Kubota², Akira Ohtomo¹, Takeyoshi Onuma^2,3, Keita Ohtani⁴, Hideo Ohno⁴, Shigefusa F. Chichibu^2,3 and Masashi Kawasaki¹

¹Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
²Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
³NICP, ERATO, Japan Science and Technology Agency, Kawaguchi, Saitama 332-0012, Japan
⁴Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan

(Received April 19, 2005; accepted April 21, 2005; published May 11, 2005)

A near-band-edge bluish electroluminescence (EL) band centered at around 440 nm was observed from ZnO p–i–n homojunction diodes through a semi-transparent electrode deposited on the p-type ZnO top layer. The EL peak energy coincided with the photoluminescence peak energy of an equivalent p-type ZnO layer, indicating that the electron injection from the n-type layer to the p-type layer dominates the current, giving rise to the radiative recombination in the p-type layer. The imbalance in charge injection is considered to originate from the lower majority carrier concentration in the p-type layer, which is one or two orders of magnitude lower than that in the n-type one. The current-voltage characteristics showed the presence of series resistance of several hundreds ohms, corresponding to the current spread resistance within the bottom n-type ZnO. The employment of conducting ZnO substrates may solve the latter problem.

URL: http://jjap.jsap.jp/link?JJAP/44/L643/
DOI: 10.1143/JJAP.44.L643

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