Jpn. J. Appl. Phys. 44 (2005) pp. L679-L682  |Next Article|  |Table of Contents|
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Express Letter

Progress in the Efficiency of Wide-Gap Cu(In1-xGax)Se2 Solar Cells Using CIGSe Layers Grown in Water Vapor

Shogo Ishizuka, Keiichiro Sakurai, Akimasa Yamada, Hajime Shibata, Koji Matsubara, Minoru Yonemura1, Satoshi Nakamura1, Hisayuki Nakanishi1, Takeshi Kojima and Shigeru Niki

National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
1Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan

(Received April 25, 2005; accepted May 5, 2005; published May 23, 2005)

Progress in the performance of wide-gap Cu(In1-xGax)Se2 (CIGSe) solar cells for x values around 0.5 has been demonstrated using CIGSe layers grown in the presence of water vapor. While CIGSe thin films deposited in the presence of water vapor showed variations in electrical properties such as increases in hole carrier density and a consequent enhancement of p-type conductivity, no significant changes in the morphology and growth orientation were observed. Both the open circuit voltages and current densities of the CIGSe solar cells were improved using CIGSe layers grown in water vapor. An 18.1%-efficient cell with an open circuit voltage of 0.744 V, a current density of 32.4 mA/cm2 and a fill factor of 0.752 was fabricated from a 1.3 eV-CIGSe (x ∼0.48) layer.

URL: http://jjap.jsap.jp/link?JJAP/44/L679/
DOI: 10.1143/JJAP.44.L679
KEYWORDS:Cu(In,Ga)Se2, thin-film solar cells, MBE, wide-gap, water vapor


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