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Jpn. J. Appl. Phys. 44 (2005) pp. L770-L773  |Previous Article| |Next Article|  |Table of Contents|
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Letter

Optimization of Annealing Time and Cu Concentration for Study of Luminescence Properties of Cu-Implanted ZnO Thin Films

Isao Sakaguchi, Haruki Ryoken, Yoshiyuki Sato¹, Syunichi Hishita, Naoki Ohashi, Noriko Saito and Hajime Haneda

National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
¹NTT Advanced Technology Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan

(Received March 3, 2005; accepted April 19, 2005; published June 3, 2005)

New ion implantation techniques were applied to optimize conditions such as annealing time, Cu dose, and Cu concentration for the green emission originating from Cu phosphor in ZnO thin films. Copper ions accelerated to 150 keV were implanted at room temperature. In the ZnO thin films implanted with Cu, the suitable annealing time was 90 min at 800°C. The optimal Cu dose was determined to be 4.5 ×10¹⁴ ions/cm². The ZnO thin films optimized for effective green emission had a Cu concentration of 9 ×10¹⁸ ions/cm³.

URL: http://jjap.jsap.jp/link?JJAP/44/L770/
DOI: 10.1143/JJAP.44.L770

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