Jpn. J. Appl. Phys. 45 (2006) pp. 1410-1413  |Previous Article| |Next Article|  |Table of Contents|
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Patterning of ZnS–SiO₂ by Laser Irradiation and Wet Etching

Hiroshi Miura, Nobuaki Toyoshima, Yoshitaka Hayashi, Suguru Sangu, Noriyuki Iwata and Junnichi Takahashi

(Received August 15, 2005; accepted November 4, 2005; published online February 24, 2006)

Generally, ZnS–SiO₂ thin film is used as a protective layer in phase-change optical media. The wet etching characteristics of ZnS–SiO₂ have been investigated, and it was found that ZnS–SiO₂ can be patterned by laser irradiation and wet etching. Convex patterns of ZnS–SiO₂ with steep taper profiles were formed. The minimum size of ZnS–SiO₂ dots was 90 nm, and the minimum width of ZnS–SiO₂ lines was 100 nm. These pattern sizes were approximately one-fourth of the laser beam spot from a 405 nm laser diode (LD) with an objective lens of 0.85 numerical aperture (NA). The pattern edges of ZnS–SiO₂ dots and lines were clear and smooth. These results prove that ZnS–SiO₂ is a useful material for forming nanometer-scale patterns.

URL: http://jjap.jsap.jp/link?JJAP/45/1410/
DOI: 10.1143/JJAP.45.1410

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