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Jpn. J. Appl. Phys. 45 (2006) pp. 1560-1565  |Previous Article| |Next Article|  |Table of Contents|
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Electrical and Interfacial Properties of Nonalloyed Ti/Au Ohmic and Pt Schottky Contacts on Zn-Terminated ZnO

Han-Ki Kim, Sang-Woo Kim, Beelyong Yang, Sang-Ho Kim1, Kwang Hoon Lee2, Seung Hyun Ji2 and Young Soo Yoon2

School of Advanced Materials and Systems Engineering, Kumoh National Institute Technology (KIT), 1 Yangho-dong, Gumi, Gyeongbuk 730-701, Korea
1Department of Materials Science and Engineering, Gwangju Institute of Science and Technolgoy, Gwangju 500-712, Korea
2Department of Advanced Technology Fusion (DATF), Konkuk University, 1 Hwayang-dong, Gwangjin-gu, Seoul 143-701, Korea

(Received September 21, 2005; accepted November 26, 2005; published online March 8, 2006)

We report on the electrical and interfacial properties of nonalloyed Ti/Au ohmic and Pt Schottky contacts on Zn-terminated n-ZnO (1.5×1017 cm-3). Nonalloyed Ti/Au and Pt contacts on the Zn-terminated ZnO respectively exhibit ohmic and Schottky behavior owing to different work functions and out-diffusion characteristics. The nonalloyed Ti/Au contact reveals very linear current–voltage behavior with a specific contact resistivity of 2.2×10-5 Ω cm2. However, Pt contact shows Schottky behavior with Schottky barrier heights (SBHs) of 0.62 eV and 0.78 eV, obtained from current–voltage (I–V) and capacitance–voltage (C–V) measurements, respectively. Using Auger electron spectroscopy (AES), we correlated the electrical properties of the nonalloyed Ti/Au ohmic and Pt Schottky contacts with the properties of the interface between the metal and ZnO.

URL: http://jjap.jsap.jp/link?JJAP/45/1560/
DOI: 10.1143/JJAP.45.1560


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