Jpn. J. Appl. Phys. 45 (2006) pp. 32-35  |Previous Article| |Next Article|  |Table of Contents|
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Heavily p-Type Silicon Carbide Thick Layer Growth by Low-Temperature Liquid Phase Epitaxy

Akira Tanaka and Hironobu Katsuno

(Received June 13, 2005; accepted October 5, 2005; published online January 10, 2006)

By reacting Al–Si solution with propane gas at 1000°C, thick p⁺-type epitaxial layers on a 4H–SiC substrate were grown. The layers with a thickness of about 20 to 60 µm were formed after a growth period of 8 h using solutions of 0.2 to 0.4 Si atom fractions. Al composition ratios in the layers were around 1 at. %, and the hole concentrations were in the range of 10²⁰–10²¹ cm^-3.

URL: http://jjap.jsap.jp/link?JJAP/45/32/
DOI: 10.1143/JJAP.45.32
KEYWORDS:SiC, liquid phase epitaxy, low-temperature growth, p⁺ doping

References | Citing Article (1)

1. K. Onoue, T. Nishikawa, M. Katsuno, N. Ohtani, H. Yashiro and M. Kanaya: Jpn. J. Appl. Phys. 35 (1995) 2240[JSAP].
2. H. McD. Hobgood, R. C. Glass, G. Augustine, R. H. Hopkins, J. Jenny, M. Skowronski, W. C. Mitchel and M. Roth: Appl. Phys. Lett. 66 (1995) 1364[AIP Scitation].
3. St. G. Müller, M. F. Brady, W. H. Brixius, G. Fechko, R. C. Glass, D. Henshall, H. McD. Hobgood, J. R. Jenny, R. Leonard, D. Malta, A. Powell, V. F. Tsvetkov, S. Allen, J. Palmour and C. H. Carter, Jr.: Mater. Sci. Forum 389–393 (2002) 23.
4. D. Hobgood, M. Brady, W. Brixius, G. Fechko, R. Glass, D. Henshall, J. Jenny, R. Leonard, D. Malta, St. G. Müller, V. Tsvetkov and C. H. Carter, Jr.: Mater. Sci. Forum 338–342 (2000) 3.
5. N. Ohtani, T. Fujimoto, M. Katsuno, T. Aigo and H. Yashiro: Mater. Sci. Forum 389–393 (2002) 29.
6. M. Ikeda, H. Matsunami and T. Tanaka: Phys. Rev. B 22 (1980) 2842[APS].
7. Y. M. Tairov: Inst. Phys. Conf. Ser. 142 (1996) 11.
8. D. Chaussende, C. Jacquier, G. Ferro, J. C. Viala, F. Cauwet and Y. Monteil: Mater. Sci. Forum 353–356 (2001) 85.
9. L. L. Oden and R. A. McCune: Metall. Trans. A 18 (1987) 2005.
10. J. C. Viala, P. Fortier and J. Bouix: J. Mater. Sci. 25 (1990) 1842[CrossRef].
11. C. Jacquier, G. Ferro, F. Cauwet, J. C. Viala, G. Younes and Y. Monteil: J. Cryst. Growth 254 (2003) 123.
12. A. Tanaka, N. Shiozaki and H. Katsuno: J. Cryst. Growth 237–239 (2002) 1202[CrossRef].
13. A. Tanaka, T. Ataka, E. Ohkura and H. Katsuno: J. Cryst. Growth 269 (2004) 413[CrossRef].
14. A. Tanaka, T. Ataka, E. Ohkura and H. Katsuno: Jpn. J. Appl. Phys. 43 (2004) 7670[JSAP].
15. A. Tanaka, Y. Funayama, T. Murakami and H. Katsuno: J. Cryst. Growth 249 (2003) 59[CrossRef].
16. H. Soezima: Densi-sen Maikuro Anarisisu (Electron Probe Microanalysis) (Nikkan Kogyo, Tokyo, 1987) p. 390 [in Japanese].
17. S. Rendakova, V. Ivantsov and V. Dmitriev: Mater. Sci. Forum 264–268 (1998) 163.
18. H. Matsunami and T. Kimoto: Mater. Sci. Eng. R 20 (1997) 125.
19. A. Schöner, N. Nordell, K. Rottner, R. Helbig and G. Pensl: Inst. Phys. Conf. Ser. 142 (1996) 493.