Jpn. J. Appl. Phys. 45 (2006) pp. 3433-3435  |Previous Article| |Next Article|  |Table of Contents|
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GaN-Based Green Resonant Cavity Light-Emitting Diodes

Shih-Yung Huang, Ray-Hua Horng¹, Wei-Kai Wang and Dong-Sing Wuu

(Received September 12, 2005; accepted December 19, 2005; published online April 25, 2006)

GaN-based resonant cavity light-emitting diodes (RCLEDs) have been successfully fabricated on Si substrate by laser lift-off and wafer bonding techniques. A five-pair TiO₂/SiO₂ dielectric distributed Bragg reflector (DBR) (with 85% reflectivity) and an Ag layer (with 99% reflectivity) were employed as top and bottom mirrors, respectively, for front emission RCLEDs. The room temperature light output power of the RCLED was 1.5 times that of similar LED structures without a top DBR mirror under 20 mA injection current. The cavity modes exhibit a linewidth of 5.5 nm at 525 nm wavelength, which corresponds to a quality factor about 100. Moreover, the full width at half maximum of the emission can be reduced to 35 nm, as a result of the effect of the resonant cavity.

URL: http://jjap.jsap.jp/link?JJAP/45/3433/
DOI: 10.1143/JJAP.45.3433

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