Jpn. J. Appl. Phys. 45 (2006) pp. 3666-3668  |Previous Article| |Next Article|  |Table of Contents|
|Full Text PDF (113K)| |Buy This Article|

Effect of Ion Diffusion on Switching Voltage of Solid-Electrolyte Nanometer Switch

Naoki Banno1,2, Toshitsugu Sakamoto1,2, Tsuyoshi Hasegawa2,3, Kazuya Terabe2,3 and Masakazu Aono2,3

1Fundamental and Environmental Research Labs., NEC Corp., Tsukuba, Ibaraki 305-8501, Japan
2ICORP, Japan Science and Technology Agency (JST), Kawaguchi, Saitama 332-0012, Japan
3Nanomaterials Laboratory, NIMS, Tsukuba, Ibaraki 305-0003, Japan

(Received September 30, 2005; accepted November 15, 2005; published online April 25, 2006)

A solid electrolyte switch turns on or off when a metallic bridge is formed or dissolved respectively in the solid electrolyte (here we use Cu2-αS). For logic applications, the switching voltage (<0.3 V) should be larger than the operating voltage of the logic circuit (about 1 V). We reveal that the switching voltage is mainly affected by Cu+ ionic transport in Cu2-αS and that a solid electrolyte with an ion diffusion coefficient smaller than that of Cu2-αS by several tens of orders of magnitude makes it possible to increase the switching voltage to 1 V.

DOI: 10.1143/JJAP.45.3666
KEYWORDS:solid electrolyte, electrochemical reaction, ion diffusion, programmable logic

|Full Text PDF (113K)| |Buy This Article| Citation:

References | Citing Articles (26)

  1. M. N. Kozicki, M. Mitkova and J. Zhu: Tech. Dig. Si Nanoelectronics Workshop, 2002, p. 200.
  2. T. Sakamoto, S. Kaeriyama, H. Sunamura, M. Mizuno, H. Kawaura, T. Hasegawa, K. Terabe, T. Nakayama and M. Aono: Int. Solid-State Circuits Conf. (ISSCC) Dig. Tech. Pap., 2004, p. 290.
  3. T. Sakamoto, H. Sunamura, H. Kawaura, T. Hasegawa, T. Nakayama and M. Aono: Appl. Phys. Lett. 82 (2003) 3032[AIP Scitation].
  4. T. Sakamoto, H. Sunamura, H. Kawaura, T. Hasegawa, T. Nakayama and M. Aono: Ext. Abstr. Int. Conf. Solid State Device and Materials (SSDM2002), 2002, p. 264.
  5. ITRS2004 Update.
  6. L. H. Allen and E. Buhks: J. Appl. Phys. 56 (1984) 327[AIP Scitation].
  7. K. Okamoto and S. Kawai: Jpn. J. Appl. Phys. 12 (1973) 1130[JSAP].
  8. J. D. McBrayer, R. M. Swanson and T. W. Sigmon: J. Electrochem. Soc. 133 (1986) 1242.

|TOP|  |Previous Article| |Next Article|  |Table of Contents| |JJAP Home|
Copyright © 2013 The Japan Society of Applied Physics
Contact Information