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Jpn. J. Appl. Phys. 45 (2006) pp. 3708-3711  |Previous Article| |Next Article|  |Table of Contents|
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Single Grain and Single Grain Boundary Resistance of Pentacene Thin Film Characterized Using a Nanoscale Electrode Array

Tomohiko Edura, Hiromasa Takahashi1, Masashi Nakata1, Harumasa Onozato, Jun Mizuno, Ken Tsutsui, Masamitsu Haemori2, Kenji Itaka2, Hideomi Koinuma2,3 and Yasuo Wada1,3

Nanotechnology Research Laboratory, Waseda University, 513 Wasedatsurumakicho, Shinjuku-ku, Tokyo 162-0041, Japan
1Graduate School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555, Japan
2Graduate School of Frontier Science, University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8562, Japan
3CREST/Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan

(Received September 13, 2005; revised October 25, 2005; accepted November 8, 2005; published online April 25, 2006)

In this paper, we report on a less than 100-nm-wide nanoscale electrode array, with which the field-effect mobilities of a single grain and a single grain boundary in organic thin films are characterized. The method of fabricating the nanoscale electrode array and the evaluation results of the pentacene thin film are described. The nanoscale electrode array was fabricated by EB lithography and a liftoff process. The pentacene thin film was deposited by molecular-beam epitaxy (MBE). The resistances of a single grain and a single grain boundary were estimated to be around 10 and 100 MΩ, respectively, and the field-effect mobility was estimated to be around 1 cm2/(V s), which is almost comparable to the highest value ever reported. These results confirm that a single crystal is essential for high performance organic thin-film transistors.

URL: http://jjap.jsap.jp/link?JJAP/45/3708/
DOI: 10.1143/JJAP.45.3708


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