Jpn. J. Appl. Phys. 45 (2006) pp. 4347-4350 |Previous Article| |Next Article| |Table of Contents|
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Location and Orientation Control of Si Grain by Combining Metal-Induced Lateral Crystallization and Excimer Laser Annealing
Naoyuki Higashi,
Gou Nakagawa,
Tanemasa Asano,
Mitsutoshi Miyasaka1 and
John Stoemenos2
Center for Microelectronic Systems, Kyushu Institute of Technology, 680-4, Kawazu, Iizuka, Fukuoka 820-8502, Japan
1Advanced Product Development Center, Seiko Epson Corporation, 281 Fujimi, Suwa, Nagano 399-0293, Japan
2Department of Physics, Aristotle University of Thessaloniki, 54124 Thessaloniki, Greece
(Received August 6, 2005; revised September 26, 2005; accepted October 10, 2005; published online May 25, 2006)
A new technique of controlling the location and orientation of Si grain by combining metal-induced lateral crystallization (MILC) and excimer laser annealing (ELA) is proposed. A starting amorphous Si (a-Si) film is deposited on a SiO2 substrate having shallow pits. MILC is used to crystallize the a-Si film in a highly oriented polycrystal. ELA is used to recrystallize the highly oriented polycrystalline Si film. ELA produces large Si grains at the shallow pit sites because temperature gradient is generated by slanting Si surface on the slope of the pit. Si grains whose size is approximately 1.6 µm were formed at the pit sites. Electron backscatter diffraction pattern (EBSP) analysis showed that the crystal orientation aligned over the grain boundary.
URL:
http://jjap.jsap.jp/link?JJAP/45/4347/
DOI: 10.1143/JJAP.45.4347
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