Jpn. J. Appl. Phys. 45 (2006) pp. 4489-4492 |Previous Article| |Next Article| |Table of Contents|
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Piezoelectric Performance and Domain Structure of Epitaxial PbTiO3 Thin Film Deposited by Hydrothermal Method
Takeshi Morita and
Yasuo Cho
Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
(Received November 30, 2005; accepted February 22, 2006; published online May 25, 2006)
The hydrothermal method enables the high quality epitaxial PbTiO3 deposition at 150 °C and we have already reported on the ferroelectric properties of an about 100-nm-thick PbTiO3 film. In this study, the piezoelectric properties of a 430-nm-thick PbTiO3 epitaxial film were examined. The domain structure was composed of predominantly the +c-domain and a small amount of the a-domain. The DE hysteresis curve and piezoelectric strain were asymmetrical because the initial domain structure was stable and difficult to reverse perfectly with an external electric field. The strain has an excellent linearity, and d33effec coefficient was found to be 97 pC/N, which is larger than the predicted value. The large-piezoelectric performance and excellent linearity are suitable for ultrasonic transducers applications.
URL:
http://jjap.jsap.jp/link?JJAP/45/4489/
DOI: 10.1143/JJAP.45.4489
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