Jpn. J. Appl. Phys. 45 (2006) pp. 4601-4603  |Previous Article| |Next Article|  |Table of Contents|
|Full Text PDF (140K)| |Buy This Article|

Piezoelectric Photothermal and Photoreflectance Spectra of In_xGa_1-xN Grown by Radio-Frequency Molecular Beam Epitaxy

Eiki Kawano, Yuki Uchibori, Takashi Shimohara, Hironori Komaki, Ryuji Katayama¹, Kentaro Onabe¹, Atsuhiko Fukuyama and Tetsuo Ikari

(Received November 30, 2005; accepted February 21, 2006; published online May 25, 2006)

Piezoelectric photothermal spectroscopy (PPTS) measurements were carried out on In_xGa_1-xN (x=0.01–0.32) thin films grown by radio-frequency molecular beam epitaxy. We found that the band energy shifts to the lower energy side of the spectrum (red shift) with an increase in the indium composition from 0.01 to 0.32. For samples with a lower indium composition, we were able to observe the exciton contribution, and the binding energy was estimated to be 27 meV (x=0.01). Since conventional photoreflectance (PR) spectroscopy was unable to observe signals for the samples with a higher indium content (x=0.13, 0.2, and 0.32), the usefulness of this PPTS method for samples with phase fluctuation is demonstrated.

URL: http://jjap.jsap.jp/link?JJAP/45/4601/
DOI: 10.1143/JJAP.45.4601

References | Citing Articles (7)

1. S. Nakamura, M. Senoh, N. Iwasa and S. Nagahama: Jpn. J. Appl. Phys. 34 (1995) L797[JSAP].
2. S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama, T. Yamada and T. Murai: Jpn. J. Appl. Phys. 34 (1995) L1332[JSAP].
3. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku and Y. Sugimoto: Jpn. J. Appl. Phys. 35 (1996) L74[JSAP].
4. S. Chichibu, H. Okumura, S. Nakamura, G. Feuillet, T. Azuhata, T. Sota and S. Yoshida: Jpn. J. Appl. Phys. 36 (1997) 1976[JSAP].
5. A. Fukuyama, A. Memon, K. Sakai, Y. Akashi and T. Ikari: J. Appl. Phys. 89 (2001) 1751[AIP Scitation].
6. K. Imai, S. Fukushima, T. Ikari and M. Kondow: Jpn. J. Appl. Phys. 43 (2004) 2942[JSAP].
7. P. Wang, M. Tada, M. Ohta, K. Sakai, A. Fukuyama and T. Ikari: Jpn. J. Appl. Phys. 43 (2004) 2965[JSAP].
8. T. Ikari, A. Fukuyama, K. Maeda and K. Futagami, S. Shigetomi and Y. Akashi: Phys. Rev. B 46 (1992) 10173[APS].
9. A. Fukuyama, H. Fukuhara, S. Tanaka, A. Memon, K. Sakai, Y. Akashi and T. Ikari: J. Appl. Phys. 90 (2001) 4385[AIP Scitation].
10. A. Fukuyama, H. Nagatomo, Y. Akashi and T. Ikari: Mater. Sci. Semicond. Process. 4 (2001) 265.
11. T. Ikari, S. Shigetomi, Y. Koga, H. Nishimura, H. Yayama and A. Tomokiyo: Phys. Rev. B 37 (1988) 886[APS].
12. D. E. Aspnes: Surf. Sci. 37 (1973) 418[CrossRef].
13. B. Monemar, J. P. Bergman, T. Lnmdstrom, C. I. Harris, H. Amano, I. Akasaki, T. Detchprohm, K. Hiramatsu and N. Sawaki: Solid-State Electron. 41 (1997) 181[CrossRef].
14. R. J. Elliott: Phys. Rev. 108 (1957) 1384[APS].
15. D. D. Sell and P. Lawaetz: Phys. Rev. Lett. 26 (1971) 311[APS].
16. M. Grandolfo, E. Gratton, F. Anfosso Soma and P. Vecchia: Phys. Status Solidi B 48 (1971) 729.
17. A. Balzarotti and M. Piacentini: Solid State Commun. 10 (1972) 421[CrossRef].
18. V. Yu. Davydov, A. A. Klochikhin, V. V. Emtsev, S. V. Ivanov, V. V. Vekshin, F. Bechstedt, J. Furthmüller, H. Harima, A. V. Mudryi, A. Hashimoto, A. Yamamoto, J. Aderhold, J. Graul and E. E. Haller: Phys. Status Solidi B 230 (2002) R4[CrossRef].
19. I. Vurgaftman, J. R. Meyer and L. R. Ram-Mohan: J. Appl. Phys. 89 (2001) 5815[AIP Scitation].