Jpn. J. Appl. Phys. 45 (2006) pp. 5317-5321  |Previous Article| |Next Article|  |Table of Contents|
|Full Text PDF (755K)| |Buy This Article|

Multifunctional Device Using Nanodot Array

Takuya Kaizawa, Takahide Oya, Masashi Arita, Yasuo Takahashi and Jung-Bum Choi1

Graduate School of Information Science and Technology, Hokkaido University, Sapporo 060-0814, Japan
1Department of Physics and Research Institute of NanoScience and Technology, Chungbuk National University, Cheongju 361-763, Korea

(Received December 9, 2005; accepted March 15, 2006; published online June 8, 2006)

We have fabricated a new single-electron device (SED) that has many nanodots. Although SEDs have the great advantages of small size and low power consumption, they should have small dots on the order of a few nanometers, which makes them difficult to fabricate. The proposed device uses many nanodots aligned as an array, on which many gate electrodes are attached so as to couple capacitively to underlying nanodots. Some of the gates are used as input gates of a logic-gate device. The others are control gates that are used to change the logic function of the device, such as from an AND gate to an XOR (exclusive OR) one. The principal operations have been demonstrated using numerical simulations.

URL: http://jjap.jsap.jp/link?JJAP/45/5317/
DOI: 10.1143/JJAP.45.5317


|Full Text PDF (755K)| |Buy This Article| Citation:


References | Citing Articles (3)

  1. Y. Takahashi, Y. Ono, A. Fujiwara and H. Inokawa: J. Phys.: Condens. Matter 14 (2002) R995[IoP STACKS].
  2. K. Uchida, J. Koga, R. Ohba and A. Toriumi: IEEE Trans. Electron Devices 50 (2003) 1623[CrossRef].
  3. H. Namatsu, Y. Watanabe, K. Yamaguchi, M. Nagase, A. Fujiwara and S. Horiguchi: J. Vac. Sci. Technol. B 21 (2003) 2869[AIP Scitation].
  4. M. Saitoh, H. Harata and T. Hiramoto: Jpn. J. Appl. Phys. 44 (2005) L338[JSAP].
  5. N. Kuwamura, K. Taniguchi and C. Hamaguchi: Electron. Commun. Jpn., Part 2 77 (1994) 65.
  6. H. Namatsu, Y. Takahashi, K. Yamazaki, T. Yamaguchi, M. Nagase and K. Kurihara: J. Vac. Sci. Technol. B 16 (1998) 69[AIP Scitation].
  7. U. Meirav, P. J. McEuen, M. A. Kastner, E. B. Foxman, A. Kumar and S. J. Wind: Z. Phys. B 85 (1991) 357[CrossRef].

|TOP|  |Previous Article| |Next Article|  |Table of Contents| |JJAP Home|
Copyright © 2013 The Japan Society of Applied Physics
Contact Information