Jpn. J. Appl. Phys. 45 (2006) pp. 6524-6527  |Previous Article| |Next Article|  |Table of Contents|
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Solution-Processed Single-Walled Carbon Nanotube Transistors with High Mobility and Large On/Off Ratio

Tomohiro Fukao, Shuichi Nakamura, Hiromichi Kataura1 and Masashi Shiraishi

Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan
1AIST Nanotech. Res. Inst., 1-1-1 Umezono, Tsukuba, Ibaraki 305-8562, Japan

(Received January 26, 2006; accepted April 26, 2006; published online August 4, 2006)

We have examined the device characteristics of solution-processed single-walled carbon nanotube (SWNT) transistors. By using an electrical breakdown, SWNT-field-effect transistors (FETs) exhibited an on/off ratio (Ion/Ioff) of 104 and a field-effect mobility of 3.6 cm2 V-1 s-1 in air, which are comparable to those of other organic FETs. We investigated the detailed mechanism of carrier injection from electrode metals into SWNTs. From the temperature dependence of source–drain current, we evaluated the effective Schottky barrier height for holes to be 170 meV.

DOI: 10.1143/JJAP.45.6524
KEYWORDS:Carbon nanotube, solution process, field-effect transistor, organic semiconductor, mobility, carrier injection, Schottky barrier

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