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Jpn. J. Appl. Phys. 45 (2006) pp. 714-719  |Previous Article| |Next Article|  |Table of Contents|
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Simple Modeling and Characterization of Stress Migration Phenomena in Cu Interconnects

Haruo Tsuchikawa1,2, Yoriko Mizushima1, Tomoji Nakamura1, Takashi Suzuki1 and Hirochika Nakajima2

1Fujitsu Laboratories Ltd., Akiruno Technology Center, 50 Fuchigami, Akiruno, Tokyo 197-0833, Japan
2Graduate School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555, Japan

(Received September 11, 2005; accepted November 5, 2005; published online February 8, 2006)

Many observations of stress-induced voids beneath vias in wide Cu lines have been performed to analyze stress migration phenomena. Most of the voids that caused fatal failures of circuits accompanied grain boundaries in the lower lines. Finite element method calculations were performed to obtain the stress distribution around a via sandwiched between wide upper and lower lines. Based on these results, a void growth model for the Cu stress migration phenomena has been proposed by applying the Hull and Rimmer theory. This model takes two diffusion paths, such as a grain boundary and a barrier/Cu interface, into consideration. Compared with experimental results, the proposed model successfully explained the mean time to failure dependence on the temperature and geometrical parameters of Cu interconnects.

URL: http://jjap.jsap.jp/link?JJAP/45/714/
DOI: 10.1143/JJAP.45.714
KEYWORDS:stress migration, stress induced voiding, grain boundary, Cu interconnect, finite element method


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