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Jpn. J. Appl. Phys. 45 (2006) pp. 739-741  |Previous Article| |Next Article|  |Table of Contents|
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Brief Communication

Nonpolar m-Plane Blue-Light-Emitting Diode Lamps with Output Power of 23.5 mW under Pulsed Operation

Arpan Chakraborty1, Benjamin A. Haskell2,3, Hisashi Masui2, Stacia Keller1, James S. Speck2,3, Steven P. DenBaars1,2,3, Shuji Nakamura1,2,3 and Umesh K. Mishra1

1Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.
2Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
3NICP/ERATO JST, UCSB Group, University of California, Santa Barbara, CA 93106, U.S.A.

(Received October 6, 2005; accepted October 19, 2005; published online February 8, 2006)

We report on the DC and pulsed performance of nonpolar m-plane InGaN/GaN multiple-quantum-well light-emitting diode (LED) lamps. LED structures were grown on free-standing m-plane GaN substrates by metalorganic chemical vapor deposition. LEDs with an area of 300×300 µm2 were packaged into conventional epoxy-encapsulated lamps. The emission wavelength of the LEDs was 452 nm. A CW output power as high as 0.6 mW was achieved at a drive current of 20 mA, corresponding to an external quantum efficiency of 1.09%. Pulsed power measurement on the lamps yielded an output power of 23.5 mW at a drive current of 1 A for a duty cycle of 0.25%.

URL: http://jjap.jsap.jp/link?JJAP/45/739/
DOI: 10.1143/JJAP.45.739
KEYWORDS:nonpolar, m-plane, light-emitting diode, lamp, free standing, pulsed power


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