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Jpn. J. Appl. Phys. 45 (2006) pp. 8717-8718  |Previous Article| |Next Article|  |Table of Contents|
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Brief Communication

Direct Wafer Bonding of GaInAsP/InP Membrane Structure on Silicon-on-Insulator Substrate

Takeo Maruyama^1,2, Tadashi Okumura¹ and Shigehisa Arai^1,2

¹Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1-S9-5 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
²Core Research for Evolutional Science and Technology, Japan Science and Technology Agency, Kawaguchi Center Building, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan

(Received July 26, 2006; accepted August 10, 2006; published online November 8, 2006)

Wafer bonding technology was investigated to integrate active photonic devices on a silicon-on-insulator (SOI) substrate for highly compact photonic integrated circuits. A single-quantum-well (SQW) GaInAsP/InP membrane structure bonded onto an SOI substrate was successfully obtained by a direct bonding with thermal annealing at 300–450 °C in H₂ atmosphere. The photoluminescence intensity of the SQW membrane structure did not degrade after this direct bonding and its spectral shape did not change. This wafer bonding technique can be applied to the realization of direct optical coupling using SOI passive waveguides from a membrane's active region.

URL: http://jjap.jsap.jp/link?JJAP/45/8717/
DOI: 10.1143/JJAP.45.8717

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