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Invited Review Paper

Breakthroughs in Improving Crystal Quality of GaN and Invention of the p–n Junction Blue-Light-Emitting Diode

Isamu Akasaki1,2,3 and Hiroshi Amano1,2

1Department of Materials Science and Engineering and Nano-factory, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
2Research Center for Nitride Semiconductors, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
3Akasaki Research Center, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

(Received August 28, 2006; accepted September 26, 2006; published online December 7, 2006)

Marked improvements in the crystalline quality of GaN enabled the production of GaN-based p–n junction blue-light-emitting and violet-laser diodes. These robust, energetically efficient devices have opened up a new frontier in optoelectronics. A new arena of wide-bandgap semiconductors has been developed due to marked improvements in the crystalline quality of nitrides. In this article, we review breakthroughs in the crystal growth and conductivity control of nitride semiconductors during the development of p–n junction blue-light-emitting devices. Recent progress mainly based on the present authors' work and future prospects of nitride semiconductors are also discussed.

URL: http://jjap.jsap.jp/link?JJAP/45/9001/
DOI: 10.1143/JJAP.45.9001
KEYWORDS:group III nitride semiconductors, MOVPE, low-temperature buffer layer, conductivity control, p–n junction, blue-light-emitting diode, short-wavelength laser diode, high-speed and high-power transistor


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