Jpn. J. Appl. Phys. 45 (2006) pp. 9069-9071  |Previous Article| |Next Article|  |Table of Contents|
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Brief Communication

On the Body-Thickness Dependence of the Linearly Extrapolated Threshold Voltage of a Double-Gate Metal–Oxide–Semiconductor Field-Effect Device

Man Wong, Xuejie Shi and Thomas Chow

Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong

(Received August 9, 2006; accepted October 2, 2006; published online December 7, 2006)

An approximate but simple expression explicitly relating the surface potential to the surface electric field of a symmetrical double-gate metal–oxide–semiconductor field-effect device is used to derive a compact expression for the linearly extrapolated threshold voltage VTe of such a device with a uniformly doped channel region. The expression is shown to be valid for both partially and fully depleted devices. VTe is predicted to exhibit a global minimum as the thickness of the channel is systematically increased.

URL: http://jjap.jsap.jp/link?JJAP/45/9069/
DOI: 10.1143/JJAP.45.9069
KEYWORDS:threshold voltage, double-gate, field-effect transistor, silicon body thickness


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