Jpn. J. Appl. Phys. 45 (2006) pp. L1064-L1066 |Previous Article| |Next Article| |Table of Contents|
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Letter
Preparation of Nanocrystalline Silicon in Amorphous Silicon Carbide Matrix
Yasuyoshi Kurokawa,
Shinsuke Miyajima,
Akira Yamada1 and
Makoto Konagai
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
1Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
(Received July 7, 2006; accepted August 28, 2006; published online October 6, 2006)
We have successfully prepared silicon quantum dots/amorphous silicon carbide multilayers by the thermal annealing of stoichiometric hydrogenated amorphous silicon carbide (a-SiC:H)/silicon-rich hydrogenated amorphous silicon carbide (a-Si1-xCx) multilayers. Raman scattering spectroscopy and transmission electron microscopy (TEM) revealed that silicon quantum dots were formed in only a-Si1-xCx layers. We also found that the size of silicon quantum dots can be controlled by the thickness of a-Si1-xCx layers.
URL:
http://jjap.jsap.jp/link?JJAP/45/L1064/
DOI: 10.1143/JJAP.45.L1064
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