Jpn. J. Appl. Phys. 45 (2006) pp. L1200-L1202 |Previous Article| |Next Article| |Table of Contents|
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Letter
Flash Memory Device with `I' Shape Floating Gate for Sub-70 nm NAND Flash Memory
Sang-Goo Jung and
Jong-Ho Lee
School of Electrical Engineering and Computer Science, Kyungpook National University, Sankyuk-Dong, Buk-Gu, Daegu 702-701, Korea
(Received September 12, 2006; accepted October 13, 2006; published online November 10, 2006)
In this article, we proposed a novel `I' shape floating gate applicable to the sub-70 nm flash memory cell with high performance and scalability. It has modified floating gate of conventional flash memory to have high coupling-ratio (CR), low effect of interference or cross-talk. Specifically, it has ∼13% higher CR and ∼33/46% lower effect of cross-talk of the bit-line/word-line state than those of conventional flash memory cell with scale-downed geometry. In addition, `I' shape flash memory cell shows improved characteristics about programming time, drain disturbance, read current, sub-threshold swing, and drain induced barrier lowering than conventional flash memory cell.
URL:
http://jjap.jsap.jp/link?JJAP/45/L1200/
DOI: 10.1143/JJAP.45.L1200
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