Jpn. J. Appl. Phys. 45 (2006) pp. L1230-L1231 |Previous Article| |Next Article| |Table of Contents|
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Letter
Design and Lithographic Characteristics of Alicyclic Fluoropolymer for ArF Chemically Amplified Resists
Katsumi Maeda,
Kaichiro Nakano and
Masamitsu Shirai1
Jisso and Production Technologies Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
1Department of Applied Chemistry, Graduate School of Engineering, Osaka Prefecture University, 1-1 Gakuen-cho, Naka-ku, Sakai, Osaka 599-8531, Japan
(Received July 7, 2006; accepted October 7, 2006; published online November 17, 2006)
We designed a novel alicyclic fluoropolymer, poly[3-hydroxy-4-(hexafluoro-2-hydroxyisopropyl)tricyclodecene], as an ArF (193 nm) chemically amplified resist. This fluoropolymer has a hexafluoroisopropanol group as an alkaline soluble unit and a hydroxyl group for improving adhesion. This polymer also exhibited a high transparency of 93%/150 nm at 193 nm, high thermal stability (355 °C), and a good adhesion to a Si substrate compared with a poly(norbornene) with a hexafluoroisopropanol group. The etching rate of our developed fluoropolymer for CF4 gas was 1.29 times that of the KrF resist. Moreover, a chemically amplified positive resist comprising an ethoxymethyl-protected polymer and a photoacid generator achieved a 110 nm line-and-space pattern with an ArF exposure.
URL:
http://jjap.jsap.jp/link?JJAP/45/L1230/
DOI: 10.1143/JJAP.45.L1230
KEYWORDS:ArF chemically amplified resist, alicyclic fluoropolymer, transparency, dry-etching resistance, lithographic capability
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