Jpn. J. Appl. Phys. 45 (2006) pp. L1230-L1231 |Previous Article| |Next Article| |Table of Contents|
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Design and Lithographic Characteristics of Alicyclic Fluoropolymer for ArF Chemically Amplified Resists
Jisso and Production Technologies Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
1Department of Applied Chemistry, Graduate School of Engineering, Osaka Prefecture University, 1-1 Gakuen-cho, Naka-ku, Sakai, Osaka 599-8531, Japan
(Received July 7, 2006; accepted October 7, 2006; published online November 17, 2006)
We designed a novel alicyclic fluoropolymer, poly[3-hydroxy-4-(hexafluoro-2-hydroxyisopropyl)tricyclodecene], as an ArF (193 nm) chemically amplified resist. This fluoropolymer has a hexafluoroisopropanol group as an alkaline soluble unit and a hydroxyl group for improving adhesion. This polymer also exhibited a high transparency of 93%/150 nm at 193 nm, high thermal stability (355 °C), and a good adhesion to a Si substrate compared with a poly(norbornene) with a hexafluoroisopropanol group. The etching rate of our developed fluoropolymer for CF4 gas was 1.29 times that of the KrF resist. Moreover, a chemically amplified positive resist comprising an ethoxymethyl-protected polymer and a photoacid generator achieved a 110 nm line-and-space pattern with an ArF exposure.
KEYWORDS:ArF chemically amplified resist, alicyclic fluoropolymer, transparency, dry-etching resistance, lithographic capability
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